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photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

Identifieur interne : 019615 ( Main/Repository ); précédent : 019614; suivant : 019616

photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

Auteurs : RBID : Pascal:98-0117866

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English descriptors

Abstract

We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry-Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μJ cm-2, and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.

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Pascal:98-0117866

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<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a"> photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity</title>
<author>
<name sortKey="Grac, R" uniqKey="Grac R">R. Grac</name>
<affiliation wicri:level="3">
<inist:fA14 i1="01">
<s1>Laboratoire d'Analyse et d'Architecture des Systèmes</s1>
<s2>31077 Toulouse</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Midi-Pyrénées</region>
<settlement type="city">Toulouse</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Pugnet, M" uniqKey="Pugnet M">M. Pugnet</name>
<affiliation wicri:level="3">
<inist:fA14 i1="01">
<s1>Laboratoire d'Analyse et d'Architecture des Systèmes</s1>
<s2>31077 Toulouse</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Midi-Pyrénées</region>
<settlement type="city">Toulouse</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Collet, J H" uniqKey="Collet J">J. H. Collet</name>
<affiliation wicri:level="3">
<inist:fA14 i1="01">
<s1>Laboratoire d'Analyse et d'Architecture des Systèmes</s1>
<s2>31077 Toulouse</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Midi-Pyrénées</region>
<settlement type="city">Toulouse</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Lambert, B" uniqKey="Lambert B">B. Lambert</name>
<affiliation wicri:level="3">
<inist:fA14 i1="02">
<s1>France Telecom CNET/LAB</s1>
<s2>22307 Lannion</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Lannion</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="De Matos, C" uniqKey="De Matos C">C. De Matos</name>
<affiliation wicri:level="3">
<inist:fA14 i1="02">
<s1>France Telecom CNET/LAB</s1>
<s2>22307 Lannion</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Lannion</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="L Haridon, H" uniqKey="L Haridon H">H. L Haridon</name>
<affiliation wicri:level="3">
<inist:fA14 i1="02">
<s1>France Telecom CNET/LAB</s1>
<s2>22307 Lannion</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Lannion</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Le Corre, A" uniqKey="Le Corre A">A. Le Corre</name>
<affiliation wicri:level="3">
<inist:fA14 i1="02">
<s1>France Telecom CNET/LAB</s1>
<s2>22307 Lannion</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Lannion</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="White, J O" uniqKey="White J">J. O. White</name>
<affiliation wicri:level="4">
<inist:fA14 i1="03">
<s1>Laboratoire de Physique de l'Université de Bourgogne</s1>
<s2>21000 Dijon</s2>
<s3>FRA</s3>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName>
<region type="region" nuts="2">Bourgogne</region>
<settlement type="city">Dijon</settlement>
</placeName>
<orgName type="university">Université de Bourgogne</orgName>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">98-0117866</idno>
<date when="1997">1997</date>
<idno type="stanalyst">PASCAL 98-0117866 INIST</idno>
<idno type="RBID">Pascal:98-0117866</idno>
<idno type="wicri:Area/Main/Corpus">017906</idno>
<idno type="wicri:Area/Main/Repository">019615</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">0749-6036</idno>
<title level="j" type="abbreviated">Superlattices microstruct.</title>
<title level="j" type="main">Superlattices and microstructures</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Diffraction efficiency</term>
<term>Diffraction gratings</term>
<term>Electromagnetic wave diffraction</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Microcavity</term>
<term>Multiple quantum well</term>
<term>Quaternary compounds</term>
<term>Semiconductor materials</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>4225F</term>
<term>Etude expérimentale</term>
<term>Diffraction onde électromagnétique</term>
<term>Réseau diffraction</term>
<term>Efficacité diffraction</term>
<term>Matériau semiconducteur</term>
<term>Puits quantique multiple</term>
<term>Composé ternaire</term>
<term>Composé quaternaire</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Indium phosphure</term>
<term>Gallium phosphure</term>
<term>InGaAs</term>
<term>As Ga In</term>
<term>InGaAsP</term>
<term>As Ga In P</term>
<term>Microcavité</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry-Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μJ cm
<sup>-2</sup>
, and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>0749-6036</s0>
</fA01>
<fA02 i1="01">
<s0>SUMIEK</s0>
</fA02>
<fA03 i2="1">
<s0>Superlattices microstruct.</s0>
</fA03>
<fA05>
<s2>22</s2>
</fA05>
<fA06>
<s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1> photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>GRAC (R.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>PUGNET (M.)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>COLLET (J. H.)</s1>
</fA11>
<fA11 i1="04" i2="1">
<s1>LAMBERT (B.)</s1>
</fA11>
<fA11 i1="05" i2="1">
<s1>DE MATOS (C.)</s1>
</fA11>
<fA11 i1="06" i2="1">
<s1>L'HARIDON (H.)</s1>
</fA11>
<fA11 i1="07" i2="1">
<s1>LE CORRE (A.)</s1>
</fA11>
<fA11 i1="08" i2="1">
<s1>WHITE (J. O.)</s1>
</fA11>
<fA14 i1="01">
<s1>Laboratoire d'Analyse et d'Architecture des Systèmes</s1>
<s2>31077 Toulouse</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>France Telecom CNET/LAB</s1>
<s2>22307 Lannion</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="03">
<s1>Laboratoire de Physique de l'Université de Bourgogne</s1>
<s2>21000 Dijon</s2>
<s3>FRA</s3>
<sZ>8 aut.</sZ>
</fA14>
<fA20>
<s1>505-509</s1>
</fA20>
<fA21>
<s1>1997</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>20820</s2>
<s5>354000077971610090</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 1998 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>98-0117866</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i2="1">
<s0>Superlattices and microstructures</s0>
</fA64>
<fA66 i1="01">
<s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry-Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μJ cm
<sup>-2</sup>
, and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B40B25F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>4225F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Etude expérimentale</s0>
<s5>45</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Experimental study</s0>
<s5>45</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Diffraction onde électromagnétique</s0>
<s5>46</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG">
<s0>Electromagnetic wave diffraction</s0>
<s5>46</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Réseau diffraction</s0>
<s5>47</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Diffraction gratings</s0>
<s5>47</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE">
<s0>Efficacité diffraction</s0>
<s5>48</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG">
<s0>Diffraction efficiency</s0>
<s5>48</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA">
<s0>Eficacia difracción</s0>
<s5>48</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Matériau semiconducteur</s0>
<s5>49</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Semiconductor materials</s0>
<s5>49</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE">
<s0>Puits quantique multiple</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG">
<s0>Multiple quantum well</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA">
<s0>Pozo cuántico múltiple</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Composé ternaire</s0>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Ternary compounds</s0>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Composé quaternaire</s0>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Quaternary compounds</s0>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE">
<s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>53</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG">
<s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>53</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE">
<s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>54</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG">
<s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>54</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG">
<s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>Gallium phosphure</s0>
<s2>NK</s2>
<s5>56</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG">
<s0>Gallium phosphides</s0>
<s2>NK</s2>
<s5>56</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE">
<s0>InGaAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE">
<s0>As Ga In</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE">
<s0>InGaAsP</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE">
<s0>As Ga In P</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE">
<s0>Microcavité</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG">
<s0>Microcavity</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21>
<s1>075</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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